Investigation of BST thin films deposited by RF magnetron sputtering in pure Argon

被引：13

作者：

Challali, F. ^{[1
,4
]}

Besland, M. P. ^{[1
]}

Benzeggouta, D. ^{[2
]}

Borderon, C. ^{[3
]}

Hugon, M. C. ^{[2
]}

Salimy, S. ^{[3
,4
]}

Saubat, J. C. ^{[4
]}

Charpentier, A. ^{[4
]}

Averty, D. ^{[3
]}

Goullet, A. ^{[1
]}

Landesman, J. P. ^{[1
]}

机构：

[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel, IMN,UMR 6502, F-44322 Nantes 3, France

[2] Univ Paris 11, Phys Gaz & Plasmas Lab, F-91405 Orsay, France

[3] Univ Nantes, Inst Rech Electrotech & Elect Nantes Atlantique, F-44322 Nantes 3, France

[4] MHS Elect, F-44300 Nantes, France

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 16期

关键词：

BST; Thin layer deposition; Magnetron sputtering; Annealing; Structural analysis; XPS;

D O I：

10.1016/j.tsf.2009.12.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ba0.5Sr0.5TiO3 (BST) thin films were deposited by rf magnetron sputtering using a Ba0.5Sr0.5TiO3 target in pure Argon on two electrodes (Pt and RuO2) at room temperature. The interface formation between BST and bottom electrode (Pt or RuO2) was investigated by XPS for thicknesses in the 1 to 50 nm range. The chemical composition of the BST layers can be modified by the electrode nature over the first five nanometers. A 1 h ex-situ annealing, under flowing oxygen at 600 degrees C, was necessary to obtain crystallized 150 nm thick BST films, as evidenced by XRD and TEM analysis. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4619 / 4622

页数：4

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