共 32 条
Electrochemical synthesis and optical properties of ZnO thin film on In2O3:Sn (ITO)-coated glass
被引:36
作者:

Gu, Changdong
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机构: Jilin Univ, Coll Mat Sci & Engn, Minist Educ, Key Lab Automobile Mat, Changchun 130025, Peoples R China

Li, Jun
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机构: Jilin Univ, Coll Mat Sci & Engn, Minist Educ, Key Lab Automobile Mat, Changchun 130025, Peoples R China

Lian, Jianshe
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机构: Jilin Univ, Coll Mat Sci & Engn, Minist Educ, Key Lab Automobile Mat, Changchun 130025, Peoples R China

Zheng, Guoqu
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h-index: 0
机构: Jilin Univ, Coll Mat Sci & Engn, Minist Educ, Key Lab Automobile Mat, Changchun 130025, Peoples R China
机构:
[1] Jilin Univ, Coll Mat Sci & Engn, Minist Educ, Key Lab Automobile Mat, Changchun 130025, Peoples R China
[2] Zhejiang Univ Technol, Coll Chem Engn & Mat Sci, Hangzhou 310014, Peoples R China
关键词:
ZnO;
photoluminescence;
nanostructures;
Electrodeposition;
D O I:
10.1016/j.apsusc.2007.02.024
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
ZnO thin films were electrochemically deposited onto the ITO-coated glass substrate from an electrolyte consisted of 0.1 M Zn(NO3)(2) aqueous solution at 65 +/- degrees C. A compact ZnO film with (0 0 2) preferred orientation was obtained at the applied potential of -1.3 V for 1200 s. It was also found that the morphology of the ZnO films grown at the potential of -1.3 V was characterized of single or coalescent hexagonal platelets. However, the ZnO crystals grown at the potential of -2.0V was changed to be a bimodal size distribution. The band gap energy of the as deposited ZnO films, about 3.5 eV, was independent of both the applied potential and the deposition time, respectively. The minor amount of Zn(OH)(2) might be co-deposited with the formation of ZnO revealed by the FT-IR spectroscopy. Three strategies to improve the ZnO crystal quality based on the photoluminescence properties were proposed in the paper, which were (a) adopting the lower deposition potential, (b) increasing the deposition time at a certain potential, and (c) annealing after as-deposition, respectively. (c) 2007 Published by Elsevier B.V.
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页码:7011 / 7015
页数:5
相关论文
共 32 条
[1]
SURFACE EFFECTS ON LOW-ENERGY CATHODOLUMINESCENCE OF ZINC-OXIDE
[J].
BYLANDER, EG
.
JOURNAL OF APPLIED PHYSICS,
1978, 49 (03)
:1188-1195

BYLANDER, EG
论文数: 0 引用数: 0
h-index: 0
[2]
Nucleation effects on structural and optical properties of electrodeposited zinc oxide on tin oxide
[J].
Canava, B
;
Lincot, D
.
JOURNAL OF APPLIED ELECTROCHEMISTRY,
2000, 30 (06)
:711-716

Canava, B
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Natl Super Chim Paris, Lab Electrochim & Chim Analyt, CNRS, UMR 7575, F-75231 Paris 05, France Ecole Natl Super Chim Paris, Lab Electrochim & Chim Analyt, CNRS, UMR 7575, F-75231 Paris 05, France

Lincot, D
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Natl Super Chim Paris, Lab Electrochim & Chim Analyt, CNRS, UMR 7575, F-75231 Paris 05, France Ecole Natl Super Chim Paris, Lab Electrochim & Chim Analyt, CNRS, UMR 7575, F-75231 Paris 05, France
[3]
Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy
[J].
Chen, YF
;
Bagnall, DM
;
Zhu, ZQ
;
Sekiuchi, T
;
Park, KT
;
Hiraga, K
;
Yao, T
;
Koyama, S
;
Shen, MY
;
Goto, T
.
JOURNAL OF CRYSTAL GROWTH,
1997, 181 (1-2)
:165-169

Chen, YF
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Bagnall, DM
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Zhu, ZQ
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Sekiuchi, T
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Park, KT
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Hiraga, K
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Yao, T
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Koyama, S
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Shen, MY
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

Goto, T
论文数: 0 引用数: 0
h-index: 0
机构:
TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN
[4]
Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization
[J].
Chen, YF
;
Bagnall, DM
;
Koh, HJ
;
Park, KT
;
Hiraga, K
;
Zhu, ZQ
;
Yao, T
.
JOURNAL OF APPLIED PHYSICS,
1998, 84 (07)
:3912-3918

Chen, YF
论文数: 0 引用数: 0
h-index: 0
机构:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan

Bagnall, DM
论文数: 0 引用数: 0
h-index: 0
机构:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan

Koh, HJ
论文数: 0 引用数: 0
h-index: 0
机构:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan

Park, KT
论文数: 0 引用数: 0
h-index: 0
机构:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan

Hiraga, K
论文数: 0 引用数: 0
h-index: 0
机构:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan

Zhu, ZQ
论文数: 0 引用数: 0
h-index: 0
机构:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan

Yao, T
论文数: 0 引用数: 0
h-index: 0
机构:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan
[5]
Electrodeposition of ZnO thin films on n-Si(100)
[J].
Dalchiele, EA
;
Giorgi, P
;
Marotti, RE
;
Martín, F
;
Ramos-Barrado, JR
;
Ayouci, R
;
Leinen, D
.
SOLAR ENERGY MATERIALS AND SOLAR CELLS,
2001, 70 (03)
:245-254

Dalchiele, EA
论文数: 0 引用数: 0
h-index: 0
机构: Fac Ingn, Inst Fis, Montevideo 11000, Uruguay

Giorgi, P
论文数: 0 引用数: 0
h-index: 0
机构: Fac Ingn, Inst Fis, Montevideo 11000, Uruguay

Marotti, RE
论文数: 0 引用数: 0
h-index: 0
机构: Fac Ingn, Inst Fis, Montevideo 11000, Uruguay

Martín, F
论文数: 0 引用数: 0
h-index: 0
机构: Fac Ingn, Inst Fis, Montevideo 11000, Uruguay

Ramos-Barrado, JR
论文数: 0 引用数: 0
h-index: 0
机构: Fac Ingn, Inst Fis, Montevideo 11000, Uruguay

Ayouci, R
论文数: 0 引用数: 0
h-index: 0
机构: Fac Ingn, Inst Fis, Montevideo 11000, Uruguay

Leinen, D
论文数: 0 引用数: 0
h-index: 0
机构: Fac Ingn, Inst Fis, Montevideo 11000, Uruguay
[6]
Electrical and optical phototransformation properties in As doped Se thin films
[J].
El Zawawi, IK
;
Abd Alla, RA
.
THIN SOLID FILMS,
1999, 339 (1-2)
:314-319

El Zawawi, IK
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Res Ctr, Dept Solid State Phys, Cairo, Egypt Natl Res Ctr, Dept Solid State Phys, Cairo, Egypt

Abd Alla, RA
论文数: 0 引用数: 0
h-index: 0
机构: Natl Res Ctr, Dept Solid State Phys, Cairo, Egypt
[7]
Single violet luminescence emitted from ZnO films obtained by oxidation of Zn film on quartz glass
[J].
Fan, XM
;
Lian, JS
;
Zhao, L
;
Liu, Y
.
APPLIED SURFACE SCIENCE,
2005, 252 (02)
:420-424

Fan, XM
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China

Lian, JS
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China

Zhao, L
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China

Liu, Y
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130025, Peoples R China
[8]
ZnO thin film formation on Si(111) by laser ablation of Zn target in oxygen atmosphere
[J].
Fan, XM
;
Lian, JS
;
Guo, ZX
;
Lu, HJ
.
JOURNAL OF CRYSTAL GROWTH,
2005, 279 (3-4)
:447-453

Fan, XM
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China

Lian, JS
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China

Guo, ZX
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China

Lu, HJ
论文数: 0 引用数: 0
h-index: 0
机构:
Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Changchun 130025, Peoples R China
[9]
CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE
[J].
FUJIMURA, N
;
NISHIHARA, T
;
GOTO, S
;
XU, JF
;
ITO, T
.
JOURNAL OF CRYSTAL GROWTH,
1993, 130 (1-2)
:269-279

FUJIMURA, N
论文数: 0 引用数: 0
h-index: 0
机构: College of Engineering, University of Osaka Prefecture, Sakai, Osaka, 593

NISHIHARA, T
论文数: 0 引用数: 0
h-index: 0
机构: College of Engineering, University of Osaka Prefecture, Sakai, Osaka, 593

GOTO, S
论文数: 0 引用数: 0
h-index: 0
机构: College of Engineering, University of Osaka Prefecture, Sakai, Osaka, 593

XU, JF
论文数: 0 引用数: 0
h-index: 0
机构: College of Engineering, University of Osaka Prefecture, Sakai, Osaka, 593

ITO, T
论文数: 0 引用数: 0
h-index: 0
机构: College of Engineering, University of Osaka Prefecture, Sakai, Osaka, 593
[10]
Electrochemical deposition of zinc oxide films from non-aqueous solution: a new buffer/window process for thin film solar cells
[J].
Gal, D
;
Hodes, G
;
Lincot, D
;
Schock, HW
.
THIN SOLID FILMS,
2000, 361
:79-83

Gal, D
论文数: 0 引用数: 0
h-index: 0
机构: Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

Hodes, G
论文数: 0 引用数: 0
h-index: 0
机构:
Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

Lincot, D
论文数: 0 引用数: 0
h-index: 0
机构: Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

Schock, HW
论文数: 0 引用数: 0
h-index: 0
机构: Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel