Ti-W-O sputtered thin film as n- or p-type gas sensors

被引:33
作者
Comini, E
Sberveglieri, G
Guidi, V
机构
[1] Univ Brescia, Dipartimento Chim & Fis Mat, I-25133 Brescia, Italy
[2] Univ Brescia, INFM, I-25133 Brescia, Italy
[3] Univ Ferrara, Dipartimento Fis, Ist Nazl Fis Nucl, I-44100 Ferrara, Italy
[4] Univ Ferrara, INFM, Ist Nazl Fis Nucl, I-44100 Ferrara, Italy
关键词
TiO2; TiO; NO2-sensing; nanostructure materials;
D O I
10.1016/S0925-4005(00)00571-2
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We present some recent trends about research on gas sensors based on semiconducting thin films together with, a discussion on the development of novel nanostructured materials such as TiO, TiO2, and WO3 in single phase or as mixed oxides. The films, deposited by RF reactive sputtering from a composite target of W and Ti at two different abundances, are investigated through scanning and transmission electron microscopy (SEM and TEM) techniques for structural characterisation and by volt-amperometric technique for electrical and gas-sensing properties. All of the layers were capable to sense NO2, no effect of poisoning of the surface was recorded, and recovery of the resistance was complete. A concentration as low as 0.5 ppm was detected with a relative change in the resistance Delta R/R about 1400% and as short a response time as 2 min. A detection limit lower than 100 ppb of NO2 is expected. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:108 / 114
页数:7
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