Electric-field-induced charge injection or exhaustion in organic thin film transistor
被引:84
作者:
Kiguchi, M
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机构:Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Chiba 2778561, Japan
Kiguchi, M
Nakayama, M
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机构:Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Chiba 2778561, Japan
Nakayama, M
Shimada, T
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机构:Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Chiba 2778561, Japan
Shimada, T
Saiki, K
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机构:Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Chiba 2778561, Japan
Saiki, K
机构:
[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Chiba 2778561, Japan
[2] Univ Tokyo, Grad Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan
来源:
PHYSICAL REVIEW B
|
2005年
/
71卷
/
03期
关键词:
D O I:
10.1103/PhysRevB.71.035332
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The conductivity of organic semiconductors is measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The in situ and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few monolayers and it does not depend on gate voltages. Rather it depends on the chemical species.