Use of nonstoichiometry to form GaAs tunnel junctions

被引：34

作者：

Ahmed, S ^{[1
]}

Melloch, MR ^{[1
]}

Harmon, ES ^{[1
]}

McInturff, DT ^{[1
]}

Woodall, JM ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 25期

关键词：

D O I：

10.1063/1.120475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A tunnel diode was formed from GaAs containing excess arsenic incorporated by molecular beam epitaxy at reduced substrate temperatures. The incorporation of excess arsenic during growth results in a more efficient incorporation of silicon on donor sites and beryllium on acceptor sites. The better dopant incorporation, along with trap assisted tunneling through deep levels associated with the excess arsenic, results in a tunnel junction with record peak current density of over 1800 A/cm(2), zero-bias specific resistance of under 1X10(-4) Ohm cm, and a room-temperature peak-to-valley current ratio of 28. (C) 1997 American Institute of Physics. [S0003-6951(97)04251-4].

引用

页码：3667 / 3669

页数：3

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