Field emission characteristic studies of chemical vapor deposited diamond films

被引：15

作者：

Chen, CL

Chen, CS

Lue, JT ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30042, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30042, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 10期

基金：

美国国家科学基金会;

关键词：

field emission; diamond films; hydrogenation; J-V characteristics;

D O I：

10.1016/S0038-1101(00)00139-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemical vapor deposited (CVD) diamond films exhibiting stable and intrinsic negative electron affinity (NEA) surfaces are expected to have practical uses in field emission display devices. In this work, we attempt to study how NEA diamond surfaces can be removed and re-established by various surface treatments. The emission current density can be enhanced from 0.8 to 100 muA/cm(2) at an electric field of 18 V/mum by hydrogenation treatment. The field emission current of diamond surfaces varies manifestly with temperature as studied in this experiment which is contradictory to the simple Fowler-Nordheim equation. The field emission equation for CVD diamond surfaces at low field and high temperatures derived in this work agrees satisfactorily with the experimental results. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1733 / 1741

页数：9

共 28 条

[1] PHOTOELECTRIC-EMISSION FROM NEGATIVE-ELECTRON-AFFINITY DIAMOND(111) SURFACES - EXCITON BREAKUP VERSUS CONDUCTION-BAND EMISSION [J].