Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

被引：59

作者：

Borchert, B ^{[1
]}

Egorov, AY ^{[1
]}

Illek, S ^{[1
]}

Riechert, H ^{[1
]}

机构：

[1] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 06期

关键词：

long-wavelength lasers on GaAs; molecular beam epitaxy; optical gain; ridge-waveguide laser; semiconductor lasers; VCSEL;

D O I：

10.1109/68.849055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Rapid progress has been made in the growth of GaInNAs-GaAs by solid source molecular beam epitaxy, leading to significant improvements of such heterostructures for 1.3-mu m wavelength laser emission. We report on growth, device fabrication and characteristics of ridge-waveguide lasers in this material system. Performance data of these devices (emission at lambda = 1.29 mu m, threshold currents of 16 mA, slope efficiencies of 0.35 W/A per facet, and continuous-wave (CW) operation at 100 degrees C) prove that this new material can successfully compete with the well matured InGaAsP-InP system. Furthermore, the very first small-signal modulation measurement results of laser diodes in this novel material-system as well as first ageing results are presented.

引用

页码：597 / 599

页数：3