La-Zn doped SrM ferrite for high-density magnetic recording

被引：7

作者：

Bai, JM ^{[1
]}

Liu, XX

Xu, H

Wei, FL

Yang, Z

机构：

[1] Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Peoples R China

[2] Lanzhou Univ, Appl Magnet Lab State Educ Commiss, Lanzhou 730000, Peoples R China

来源：

ACTA PHYSICA SINICA | 2000年 / 49卷 / 08期

关键词：

ferrite thin films; magnetic recording;

D O I：

10.7498/aps.49.1595

中图分类号：

O4 [物理学];

学科分类号：

0702 [物理学];

摘要：

La-Zn doped M type Sr-ferrite thin films with various doping concentration were prepared by conventional rf diode sputtering. La-Zn doping reduces the grain growth rate, so that fine grains with mean grain size about 12nm were prepared with superior magnetic properties. It is found that suitable amount of La-Zn substitution may increase the M-s of the films, and modify the temperature coefficient of coercivity, while H-c increases with increasing concentration of La-Zn.

引用

页码：1595 / 1599

页数：5

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