Sputtered hexagonal Ba-ferrite films for high-density magnetic recording media

被引：13

作者：

Morisako, A ^{[1
]}

Matsumoto, M ^{[1
]}

Naoe, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.361639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba-ferrite (BaM) thin films were prepared by both a facing targets sputtering (FTS) system and dc magnetron sputtering (DCMS) at loom temperature. They were successively annealed to crystallize. The films prepared by FTS system were crystallized at 650 degrees C, while those prepared by DCMS system were crystallized at 700 degrees C. Saturation magnetization, coercivity, and squareness ratio of the films prepared by FTS are 210 emu/cc, 3.3 kOe, and 0.7 in perpendicular direction, respectively, after the annealing at 650 degrees C. It was found that oxidized Fe is partially reduced to metallic Fe by high-temperature annealing. (C) 1996 American Institute of Physics.

引用

页码：4881 / 4883

页数：3

共 6 条

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UMPHRESS, R ;

HOWARD, JK .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :5960-5965

[2]

MATSUMOTO M, 1989, ADV FERRITES, P533

[3] LOW-TEMPERATURE DEPOSITION OF HEXAGONAL FERRITE FILMS BY SPUTTERING [J].

MORISAKO, A ;

NAKANISHI, H ;

MATSUMOTO, M ;

NAOE, M .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :5969-5971

[4]

MORISAKO A, 1987, IEEE T MAGN, V23, P2358

[5]

MORISAKO A, 1992, P ICF 6 TOK KYOT JAP, P436

[6] FACING TARGETS TYPE OF SPUTTERING METHOD FOR DEPOSITION OF MAGNETIC METAL-FILMS AT LOW-TEMPERATURE AND HIGH-RATE [J].

NAOE, M ;

YAMANAKA, SI ;

HOSHI, Y .

IEEE TRANSACTIONS ON MAGNETICS, 1980, 16 (05) :646-648

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