Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces

被引：14

作者：

Lehner, A ^{[1
]}

Kohl, F ^{[1
]}

Franzke, SA ^{[1
]}

Graf, T ^{[1
]}

Brandt, MS ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1540732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic resonance) and compared to the oxidized and hydrogen-terminated silicon surfaces. The photoconductivity at low intensity of illumination (monomolecular recombination regime) indicates that the hydrosilylated surface has nearly as few defects as the surfaces treated in HF vapor. The paramagnetic defects detected in the spin-dependent photoconductivity are identified as the silicon dangling bond P-b-center. The density of defects at the hydrosilylated (111) silicon surface is determined by electron spin resonance measurements to be about 10(13) cm(-2). (C) 2003 American Institute of Physics.

引用

页码：565 / 567

页数：3

共 27 条

[1] Evolution of electronically active defects during the formation of Si/SiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements [J].

Angermann, H ;

Henrion, W ;

Rebien, M ;

Kliefoth, K ;

Fischer, D ;

Zettler, JT .

MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) :43-46

[2] Spectroscopic studies of the modification of crystalline Si(111) surfaces with covalently-attached alkyl chains using a chlorination/alkylation method [J].

Bansal, A ;

Li, XL ;

Yi, SI ;

Weinberg, WH ;

Lewis, NS .

JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (42) :10266-10277

[3] SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON [J].

BRANDT, MS ;

STUTZMANN, M .

PHYSICAL REVIEW B, 1991, 43 (06) :5184-5187

[4] Lewis acid mediated hydrosilylation on porous silicon surfaces [J].

Buriak, JM ;

Stewart, MP ;

Geders, TW ;

Allen, MJ ;

Choi, HC ;

Smith, J ;

Raftery, D ;

Canham, LT .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1999, 121 (49) :11491-11502

[5] Organometallic chemistry on silicon surfaces: formation of functional monolayers bound through Si-C bonds [J].

Buriak, JM .

CHEMICAL COMMUNICATIONS, 1999, (12) :1051-1060

[6] SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY [J].

DEVORE, HB .

PHYSICAL REVIEW, 1956, 102 (01) :86-91

[7] On the origin of the positive charge on hydrogenated Si surfaces and its dependence on the surface morphology [J].

Dittrich, T ;

Schwartzkopff, M ;

Hartmann, E ;

Rappich, J .

SURFACE SCIENCE, 1999, 437 (1-2) :154-162

[8] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[9] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658

[10]

HIROSE M, 1991, SOLID STATE TECHNOL, V34, P43

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