SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON

被引:32
作者
BRANDT, MS
STUTZMANN, M
机构
[1] Max-Planck-Institut F̈r Festkörperforschung, D-7000 Stuttgart 80
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 06期
关键词
D O I
10.1103/PhysRevB.43.5184
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Additional results concerning spin-dependent transport (photoconductivity and dark conductivity) in undoped, doped, and compensated amorphous hydrogenated silicon are reported. Undoped samples show in addition to the known dangling-bond and tail-state resonances a broad line, which is attributed to excitonic states and is demonstrated to be involved in light-induced degradation. In n-type and compensated samples, trapping and hopping in donor states is directly identified in spin-dependent conductivity. Implications of these results for recombination models are discussed.
引用
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页码:5184 / 5187
页数:4
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