AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates

被引：11

作者：

Modak, P ^{[1
]}

D'Hondt, M

Delbeke, D

Moerman, I

Van Daele, P

Baets, R

Demeester, P

Mijlemans, P

机构：

[1] State Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium

[2] Union Miniere Business Grp Adv Mat, B-2250 Olen, Belgium

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 08期

关键词：

AlGaInP; Ge; light emitting diode; microcavity;

D O I：

10.1109/68.867973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate microcavity light emitting diodes (MCLEDs) emitting at 650 nm on Ge substrates, Ge has the advantage of lower cost and higher strength compared to GaAs substrates. The multi-quantum well microcavity devices consisted of AlGaAs-based distributed Bragg reflector (DBR) mirrors, AlGaInP active material with an additional 5-mu m p-Al0.55Ga0.45As current spreading layer on top of the p-DBR. A maximum external quantum efficiency of 4.35% and an optical power higher than 5 mW was obtained for a device with 200-mu m diameter. The results indicate the potential use of MCLEDs on Ge for visible LEDs.

引用

页码：957 / 959

页数：3

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