Highly stable and textured hydrogenated ZnO thin films

被引：100

作者：

Myong, SY ^{[1
]}

Lim, KS ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 18期

关键词：

D O I：

10.1063/1.1571651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated intentionally hydrogenated zinc oxide (ZnO:H) fabricated by combining photoassisted metalorganic chemical vapor deposition and mercury-sensitized hydrogen addition methods. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved surface roughness of the ZnO:H film due to an enhancement of (11 (2) over bar0) orientation. The high-quality ZnO:H film is promising as a back reflector material for thin-film solar cells. (C) 2003 American Institute of Physics.

引用

页码：3026 / 3028

页数：3

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