MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate

被引：28

作者：

Cordier, Y

Bollaert, S

diPersio, J

Ferre, D

Trudel, S

Druelle, Y

Cappy, A

机构：

[1] Univ Lille 1, Inst Elect & Microelect Nord, Dept Hyperfrequences & Semicond, CNRS,UMR 9929, F-59652 Villeneuve Dascq, France

[2] Univ Lille 1, Struct & Properties Etat Solide, CNRS,UMR 9929, F-59652 Villeneuve Dascq, France

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

molecular beam epitaxy; high electron mobility transistors (HEMT); mismatch; strain relaxation; atomic force microscopy; misfit dislocation; hall effect;

D O I：

10.1016/S0169-4332(97)00556-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Lattice mismatched high electron mobility transistors with InGaAs and InAlAs buffer layers have been grown by molecular beam epitaxy on GaAs substrate. Surface morphology of epilayers has been investigated using atomic force microscopy. An inverse step layer at the exit of the linear grade has been used to enhance relaxation of strain in heterostructures with indium contents ranging from 30% to 50% and impact of surface roughness on electrical properties has been investigated. (C) 1998 Elsevier Science B.V.

引用

页码：734 / 737

页数：4

共 19 条

[1] A STUDY OF SURFACE CROSS-HATCH AND MISFIT DISLOCATION-STRUCTURE IN IN0.15GA0.85AS/GAAS GROWN BY CHEMICAL BEAM EPITAXY [J].

BEANLAND, R ;

AINDOW, M ;

JOYCE, TB ;

KIDD, P ;

LOURENCO, M ;

GOODHEW, PJ .

JOURNAL OF CRYSTAL GROWTH, 1995, 149 (1-2) :1-11

[2] THE EFFECT OF INHIBITED GROWTH-KINETICS ON GAINAS AND ALLNAS ALLOY AND INTERFACE QUALITY [J].

BROWN, AS ;

DELANEY, MJ ;

SINGH, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :384-387

[3]

CHAN YJ, 1994, JPN J APPL PHYS, V33, pL1574

[4] STRAIN RELAXATION OF COMPOSITIONALLY GRADED INXGA1-XAS BUFFER LAYERS FOR MODULATION-DOPED IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES [J].

CHANG, JCP ;

CHEN, JH ;

FERNANDEZ, JM ;

WIEDER, HH ;

KAVANAGH, KL .

APPLIED PHYSICS LETTERS, 1992, 60 (09) :1129-1131

[5] Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design [J].

Chertouk, M ;

Heiss, H ;

Xu, D ;

Kraus, S ;

Klein, W ;

Bohm, G ;

Trankle, G ;

Weimann, G .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (06) :273-275

[6] IN0.30AL0.70AS/IN0.30GA0.70AS QUASI-INSULATING GATE STRAINED-LAYER FIELD-EFFECT TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHU, P ;

LIN, CL ;

WIEDER, HH .

THIN SOLID FILMS, 1988, 166 (1-2) :155-162

[7] Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates [J].

Chyi, JI ;

Shieh, JL ;

Pan, JW ;

Lin, RM .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8367-8370

[8]

CORDIER Y, 1997, 1997 EL MAT C FORT C

[9] METAMORPHIC INYGA1-YAS/INZAL1-ZAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON GAAS (001) SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

GRIDER, DE ;

SWIRHUN, SE ;

NARUM, DH ;

AKINWANDE, AI ;

NOHAVA, TE ;

STUART, WR ;

JOSLYN, P ;

HSIEH, KC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :301-304

[10] LATTICE-MISMATCHED GROWTH AND TRANSPORT-PROPERTIES OF INALAS INGAAS HETEROSTRUCTURES ON GAAS SUBSTRATES [J].

HARMAND, JC ;

MATSUNO, T ;

INOUE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1101-L1103

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