CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology

被引：45

作者：

Wong, HSP ^{[1
]}

Chang, RT

Crabbe, E

Agnello, PD

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

[2] IBM Corp, Semicond Res & Dev Ctr, SRDC, Hopewell Junction, NY 12533 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

D O I：

10.1109/16.662797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the experimental results of the first CMOS active pixel image sensors (APS) fabricated using a high-performance 1.8-V, 0.25-mu m CMOS logic technology, No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied, This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology.

引用

页码：889 / 894

页数：6

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