Electronic properties of SiC polytypes and heterostructures

被引：11

作者：

Bechstedt, F ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

band structure; polytype; effective mass; band discontinuity;

D O I：

10.4028/www.scientific.net/MSF.264-268.265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent progress in the:study of the electronic structure of SiC polytypes is presented. Details of the band structure like Ic-space location, dispersion and degeneracy are discussed for the common SiC polytypes 3C, 6H, 4H, and 2H. They are based on ab initio calculations and measurements. The excitation aspect is included by quasiparticle effects. Consequences are derived for heterocrystalline combinations of different SiC polytypes. A type-II character is predicted.

引用

页码：265 / 270

页数：6

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