DEEP DONOR STATE OF VANADIUM IN CUBIC SILICON-CARBIDE (3C-SIC)

被引：27

作者：

DOMBROWSKI, KF ^{[1
]}

KAUFMANN, U ^{[1
]}

KUNZER, M ^{[1
]}

MAIER, K ^{[1
]}

SCHNEIDER, J ^{[1
]}

SHIELDS, VB ^{[1
]}

SPENCER, MG ^{[1
]}

机构：

[1] HOWARD UNIV,SCH ENGN,MAT SCI RES CTR EXCELLENCE,WASHINGTON,DC 20059

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron spin resonance (ESR) of silicon-substitutional vanadium in its neutral V(Si)4+ (3d1) state has been observed in cubic bulk 3C-SiC single crystals. By photo-ESR the position of the (0/+) deep donor level of vanadium could be located at E(V) + 1.7 eV. Using this level as common reference in 3C-SiC and 6H-SiC, the valence-band discontinuity in the 3C-SiC/6H-SiC interface is predicted as DELTAE(V) = 0.1 eV, with the valence band of 3C-SiC lying lower in energy. We also offer an explanation for the absence of intra-3d-shell infrared luminescence of V4+ (3d1) in 3C-SiC. (C) 1994 American Institute of Physics.

引用

页码：1811 / 1813

页数：3

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