CMOS-compatible optical rib waveguides defined by local oxidation of silicon

被引：38

作者：

Rowe, L. K.

Elsey, M.

Tarr, N. G.

Knights, A. P.

Post, E.

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 07期

关键词：

D O I：

10.1049/el:20073680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The local oxidation of silicon process is shown to be an effective means of defining optical rib waveguides in silicon on insulator while maintaining the surface planarity required for CMOS integration. Experimental waveguides have shown singlemode operation and losses of less than I dB/cm in the telecommunications band around 1550 nm.

引用

页码：392 / 393

页数：2

共 7 条

[1] EFFECTIVE INDEX METHOD FOR GENERALIZED WAVE-GUIDE DISPERSION CHARACTERISTICS ANALYSIS OF OPTICAL CHANNEL WAVE-GUIDES [J].