Segregation, quantum confinement effect and band offset for [110] SiGe NWs

被引：19

作者：

Amato, Michele ^{[3
,4
]}

Palummo, Maurizia ^{[5
]}

Ossicini, Stefano ^{[1
,2
]}

机构：

[1] Univ Modena & Reggio Emilia, European Theoret Spect Facil, CNR Ist Nanosci Ctr S3, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy

[2] Univ Modena & Reggio Emilia, Ctr Interdipartimentale En&Tech, I-42100 Reggio Emilia, Italy

[3] Univ Modena & Reggio Emilia, CNR Ist Nanosci Ctr S3, I-41125 Modena, Italy

[4] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41125 Modena, Italy

[5] Univ Roma Tor Vergata, Dipartimento Fis, European Theoret Spect Facil, CNR INFM SMC, I-00133 Rome, Italy

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 08期

关键词：

electronic structure; quantum confinement; SiGe; EPITAXIAL CORE-SHELL; NANOWIRE HETEROSTRUCTURES; ELECTRONIC-PROPERTIES; SILICON; PERFORMANCE; INTERFACES; GROWTH;

D O I：

10.1002/pssb.200983931

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Results of first-principles DFT simulations provide strong evidence that, at zero temperature, for [110] oriented SiGe nanowires (NWs), the segregated structure is favoured with respect to the mixed ones; for this observation two different schemes of calculations are presented and discussed. Moreover the segregation strongly influences the NWs electronic properties, inducing a reduced quantum confined effect (RQCE). We show here that it depends on the effect of strain in the plane normal to the direction of growth and not on the choice of lattice parameter in the direction of growth. A qualitative evaluation of the band offset between Si and Ge for SiGe NWs is also presented. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2096 / 2101

页数：6

共 37 条

[1] Scanning photocurrent imaging and electronic band studies in silicon nanowire field effect transistors [J].