Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

被引:43
作者
Savkina, NS
Lebedev, AA
Davydov, DV
Strel'chuk, AM
Tregubova, AS
Raynaud, C
Chante, JP
Locatelli, ML
Planson, D
Milan, J
Godignon, P
Campos, FJ
Mestres, N
Pascual, J
Brezeanu, G
Badila, M
机构
[1] Inst Natl Sci Appl, CEGLEY UPRESA CNRS 5005, F-69621 Villeurbanne, France
[2] AF Ioffe Physicotech Inst, St Petersburg, Russia
[3] CSIC, Inst Ciencia Mat, Bellaterra 08193, Spain
[4] Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Spain
[5] UP, Bucharest, Romania
[6] IMT, Bucharest, Romania
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 77卷 / 01期
关键词
sublimation epitaxy; 6H-SiC layers; structurally perfect layers;
D O I
10.1016/S0921-5107(00)00464-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sublimation epitaxy has not yet been a technique of prime importance to grow epitaxial 6H-SiC layers because grown layers have always shown a residual net doping level higher than 10(16) cm(-3) and a high compensation level. We present here results obtained with an optimized technology of sublimation epitaxial growth, which can be used to obtain structurally perfect layers with a concentration of uncompensated donors as low as 10(15) cm(-3). These layers have been both physically and electrically characterized. Deep level transient spectroscopy indicates that the concentration of deep levels is greatly reduced. As a consequence the hole diffusion length is significantly increased up to about 2.5 mu m, as confirmed by electron beam induced current measurements. So these optimized layers are envisaged for the fabrication of high voltage diodes or bipolar transistors. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:50 / 54
页数:5
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