Switching characteristics of submicron dimension permalloy sandwich films

被引:12
作者
Zhu, T
Shi, J
Nordquist, K
Tehrani, S
Durlam, M
Chen, E
Goronkin, H
机构
[1] Phoenix Corp. Research Laboratories, Tempe, AZ
关键词
D O I
10.1109/20.619510
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Submicron magnetoresistive sandwich cells of various sizes are fabricated and their magnetic properties are studied. A novel coupling mechanism of magnetostatic origin has been found to be mainly responsible for unique switching characteristics in cells with small length to width ratio.
引用
收藏
页码:3601 / 3603
页数:3
相关论文
共 3 条
[1]   Submicron spin valve magnetoresistive random access memory cell [J].
Chen, EY ;
Tehrani, S ;
Zhu, T ;
Durlam, M ;
Goronkin, H .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3992-3994
[2]  
TEHRANI S, 1996, TECHNICAL DIGEST, V96, P193
[3]   Switching field variation in patterned submicron magnetic film elements [J].
Zheng, YF ;
Zhu, JG .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :5471-5473