Magnetoresistive sensors

被引：379

作者：

Freitas, P. P.

Ferreira, R.

Cardoso, S.

Cardoso, F.

机构：

[1] INESC, MN, Inst Engn Sistemas Computadores Microsyst & Nanot, P-1000029 Lisbon, Portugal

[2] Univ Tecn Lisboa, Dept Phys, Inst Super Tecn, P-1096 Lisbon, Portugal

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 16期

关键词：

D O I：

10.1088/0953-8984/19/16/165221

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetoresistive sensors using spin valves and magnetic tunnel junctions are reviewed, considering applications as readers in hard disk drives, as well as applications where the ultimate field detection limits are required ( from nT down to pT). The sensor noise level in quasi-DC or high-frequency applications is described, leading to sensor design considerations concerning biomedical and read head applications. Magnetic tunnel junction based sensors using MgO barriers appear as the best candidates for ultra-low field ( pT) detection, either in the high-frequency regime, or for quasi-DC applications.

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页数：21

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