Charge transfer efficiency in proton damaged CCD's

被引:68
作者
Hardy, T [1 ]
Murowinski, R
Deen, MJ
机构
[1] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada
[2] Natl Res Council Canada, Herzberg Inst Astrophys, Victoria, BC V8X 4M6, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
CCD's; charge transfer efficiency; imaging detectors; proton damage; radiation;
D O I
10.1109/23.664167
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have performed detailed measurements of the charge transfer efficiency (CTE) in a thinned, backside-illuminated imaging charge-coupled device (CCD). The device had been damaged in three separate sections by proton radiation typical of that which a CCD would receive in space-borne experiments, nuclear imaging, or particle detection. We examined CTE as a function of signal level, temperature, and radiation dose, The dominant factor affecting the CTE in radiation-damaged CCD's is seen to be trapping by bulk states. We present a simple physical model for trapping as a function of transfer rate, trap concentration, and temperature. We have made calculations using this model and arrived at predictions which closely match the measured results. The CTE was also observed to have a nonlinear dependence on signal level. Using two-dimensional device simulations to examine the distribution of the charge packets in the CCD channel over a range of signal levels, we were able to explain the observed variation.
引用
收藏
页码:154 / 163
页数:10
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