The physical origin of InAs quantum dots on GaAs(001)

被引：56

作者：

Bottomley, DJ ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Japan Sci & Technol Corp, CREST,Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose that large heteroepitaxial stress causes InAs to melt when deposited on GaAs(001) at approximately 770 K. This leads to mixing with the substrate in order to realize a local minimum in the Gibbs free energy of the liquid phase, producing an approximate liquid composition of In0.8Ga0.2As. The liquid phase facilitates mass transport, leading to quantum dot formation. Dot formation occurs after 2.0 monolayers of liquid material accumulate in order to minimize the surface tension but without reducing the net coordination of the liquid phase atoms. Ge quantum dots on Si(001) are also discussed, and the influence of viscosity effects is inferred. (C) 1998 American Institute of Physics.

引用

页码：783 / 785

页数：3