Microstructural study of yttria stabilized zirconia buffered sapphire for YBa2Cu3O7-delta thin films

被引：21

作者：

Rao, MSR ^{[1
]}

DSouza, CP ^{[1
]}

Apte, PR ^{[1
]}

Pinto, R ^{[1
]}

Gupta, LC ^{[1
]}

Srinivas, S ^{[1
]}

Bhatnagar, AK ^{[1
]}

机构：

[1] UNIV HYDERABAD,CENT UNIV,SCH PHYS,HYDERABAD 500134,ANDHRA PRADESH,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.360876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yttria stabilized zirconia (YSZ) buffer layers were grown by rf-magnetron sputtering on the r(<1(1)over bar 02>) plane of sapphire for YBa2Cu3O7-delta(YBCO) thin film deposition. Microstructural changes of YSZ buffer layers grown using different sputtering conditions (5, 10, and 20 mTorr; Ar/O-2 gas mix ratio of 9:1 and 1:1) were monitored by atomic force microscopy (AFM). Films grown using a lower oxygen partial pressure (5 mTorr) and a higher Ar/O-2 ratio (9:1) showed smooth surface morphology and the average surface roughness increased with an increase in oxygen partial pressure. YBCO films in situ grown by pulsed laser deposition on sapphire with a YSZ buffer layer deposited using optimized sputtering parameters (5 mTorr gas pressure, 9:1 Ar/O-2 ratio) yielded the highest critical density, J(c) approximate to 4.5x10(6) A cm(-2) at 77 K. An excellent correlation between microstructure and J(c) has been found and AFM has proved to be important for the study of the microstructure of films. (C) 1996 American Institute of Physics.

引用

页码：940 / 946

页数：7

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