LARGE CRITICAL CURRENTS AND IMPROVED EPITAXY OF LASER-ABLATED AG-DOPED YBA2CU3O7-DELTA THIN-FILMS

被引：83

作者：

KUMAR, D ^{[1
]}

SHARON, M ^{[1
]}

PINTO, R ^{[1
]}

APTE, PR ^{[1
]}

PAI, SP ^{[1
]}

PURANDARE, SC ^{[1
]}

GUPTA, LC ^{[1
]}

VIJAYARAGHAVAN, R ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microstructure and critical current densities of laser ablated YBa2Cu3O7-delta thin films doped with 2-20 wt. % Ag have been studied. A critical current density as high as 1.4 X 10(7) A cm-2 at 77 K has been realized on [100] SrTiO3 substrates with YBaCuO films doped with 5 wt. % Ag which has been found to be the optimum. Evidence indicates that the improved microstructure and epitaxy which is a consequence of grain enlargement and alignment caused by Ag is responsible for the high values of critical currents observed.

引用

页码：3522 / 3524

页数：3

共 14 条

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