LARGE CRITICAL CURRENTS AND IMPROVED EPITAXY OF LASER-ABLATED AG-DOPED YBA2CU3O7-DELTA THIN-FILMS

被引:83
作者
KUMAR, D [1 ]
SHARON, M [1 ]
PINTO, R [1 ]
APTE, PR [1 ]
PAI, SP [1 ]
PURANDARE, SC [1 ]
GUPTA, LC [1 ]
VIJAYARAGHAVAN, R [1 ]
机构
[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
关键词
D O I
10.1063/1.109014
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microstructure and critical current densities of laser ablated YBa2Cu3O7-delta thin films doped with 2-20 wt. % Ag have been studied. A critical current density as high as 1.4 X 10(7) A cm-2 at 77 K has been realized on [100] SrTiO3 substrates with YBaCuO films doped with 5 wt. % Ag which has been found to be the optimum. Evidence indicates that the improved microstructure and epitaxy which is a consequence of grain enlargement and alignment caused by Ag is responsible for the high values of critical currents observed.
引用
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页码:3522 / 3524
页数:3
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