Method for achieving high selectivity and resolution in selectively deposited diamond films

被引：1

作者：

Kwan, MC ^{[1
]}

Gleason, KK ^{[1
]}

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

来源：

关键词：

diamond; selective deposition; pattern; metal mask;

D O I：

10.1016/0925-9635(96)00513-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A process for depositing CVD diamond selectively on silicon is presented. Using standard photolithography techniques, wafers are patterned with 0.6 mu m resist features. Chromium is then deposited through electron beam evaporation and lifted off of the desired growth areas with acetone. After scratching with 0.5 mu m diamond powder, the chrome film is etched off and diamond deposited in a hot filament CVD system. Micrographs demonstrating a high degree of selectivity and micron-scale resolution are presented. These include contiguous, single crystallite wide lines and square arrays of individual nuclei with 10 mu m periodicity.

引用

页码：1048 / 1050

页数：3

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[2]

Auciello O., 1995, Proceedings of the Applied Diamond Conference 1995. Applications of Diamond Films and Related Materials: Third International Conference (NIST SP 885), P65

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