Structure and properties of nitrogen-doped titanium dioxide thin films grown by atmospheric pressure chemical vapor deposition

被引:55
作者
Guo, Yu [1 ]
Zhang, Xi-Wen [1 ]
Weng, Wei-Hao [1 ]
Han, Gao-Rong [1 ]
机构
[1] Zhejiang Univ, Silicon State Key Lab Silicon Mat Sci, Hangzhou 310027, Peoples R China
关键词
titanium oxide; thin film; chemical vapor deposition; nitrogen dioxide; visible-light induced photocatalysis;
D O I
10.1016/j.tsf.2007.03.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using TiCl4, 02, and N2O as precursors, N-doped titanium dioxide thin films with large area and continuous surface were obtained by atmospheric pressure chemical vapor deposition. Measurements of X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscope, transmission electron microscope and ultravoilet-Visible transmission spectra were performed. Using N2O as N-doped source, anatase-rutile transformation is accelerated through oxygen vacancies formation, and the mean grain size of rutile crystallites decreases with the increase of NO flow rate. Compared to the pure TiO2, N-doped TiO2 films give a relative narrow optical band-gap, and their visible-liglit induced photocatalysis is much enhanced. Visible-light-induced hydrophilicity of the TiO2 thin films enhances with the increase of N2O flow rate, which might be due to the dentritic islands structure on the surface of the N-doped TiO2 thin films. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:7117 / 7121
页数:5
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