20 mΩ, 750 v high-power AlGaN/GaN heterostructure field-effect transistors on si substrate

被引：53

作者：

Iwakami, Shinichi ^{[1
]}

Machida, Osamu ^{[1
]}

Yanagihara, Masataka ^{[1
]}

Ehara, Toshihiro ^{[1
]}

Kaneko, Nobuo ^{[1
]}

Goto, Hirokazu ^{[1
]}

Iwabuchi, Akio ^{[1
]}

机构：

[1] Sanken Elect Co Ltd, Adv Technol Dev Div, Niiza, Saitama 3528666, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 20-24期

关键词：

AlGaN/GaN; HFFT; Si substrate; low on-resistance; high breakdown voltage;

D O I：

10.1143/JJAP.46.L587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low on-resistance and high-breakdown-voltage AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrate were fabricated. To improve the breakdown voltage of HFET, the total thickness of epitaxial layers was increased and the ate-to-drain spacing was expanded. As a result, the fabricated AlGaN/GaN HFETs with a gate width of 516mm exhibited a breakdown voltage of 750 V, an on-resistance of 20 m Omega, and a maximum drain current of more than 170 A. The on-resistance-area product (R-on x A) was 0.26 Omega center dot mm(2). This value was approximately 1/30 compared with that of conventional Si metaloxide-semiconductor field-effect transistors (MOSFETs).

引用

页码：L587 / L589

页数：3

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