Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

We report the growth of InGaN/GaN multiple-quantum-well blue light-emitting diode (LED) structures on Si(111) using metalorganic vapor phase epitaxy. By using growth conditions optimized for sapphire substrates, a full width at half maximum (FWHM) (102) x-ray rocking curve of less than 600 arcsec and a room-temperature photoluminescence peak at 465 nm with a FWHM of 35 nm was obtained. Simple LEDs emitting bright electroluminescence between 450 and 480 nm with turn-on voltages at 5 V were demonstrated. (C) 1999 American Institute of Physics. [S0003-6951(99)00737-8].