Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

被引：71

作者：

Tran, CA ^{[1
]}

Karlicek, RF ^{[1
]}

Schurman, M ^{[1
]}

Osinsky, A ^{[1
]}

Merai, V ^{[1
]}

Li, Y ^{[1
]}

Eliashevich, I ^{[1
]}

Brown, MG ^{[1
]}

Nering, J ^{[1
]}

Ferguson, I ^{[1
]}

Stall, R ^{[1
]}

机构：

[1] EMCORE Corp, Somerset, NJ 08837 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

关键词：

phase separation; InGaN multiple quantum wells; high-brightness blue LED;

D O I：

10.1016/S0022-0248(98)00572-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaN/GaN multiple quantum wells (MQW) and high-brightness MQW light-emitting diodes were grown by production scale metal-organic chemical vapor deposition (MOCVD). We have found that the extent of InGaN phase separation in InGaN MQWs depends strongly on growth conditions. Multiple peaks in photoluminescence (PL) of InGaN/GaN MQWs and electroluminescence (EL) of MQW LEDs can be observed at room temperature. In the presence of InGaN phase separation, photoluminescence of MQW is red-shifted with respect to the expected wavelength calculated for the apparent indium composition determined by X-ray diffraction (XRD). We have determined that InGaN phase separation is necessary for high brightness electroluminescence in LEDs. Under optimal growth conditions, MQWs with very well-defined XRD satellite peaks and PL in the wavelength range of (450-520nm) can be achieved. High-brightness LEDs emitting at 480 nm have been successfully fabricated with an output power well better than 2 mW at 20 mA and with a forward voltage less than 4 V. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：397 / 400

页数：4

共 9 条

[1] Spatially resolved cathodoluminescence spectra of InGaN quantum wells [J].