Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources

被引:4
作者
Messias, FR
Scalvi, LVA
Li, MS
Santilli, CV
Pulcinelli, SH
机构
[1] UNESP, FC, Dept Fis, BR-17033360 Bauru, SP, Brazil
[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
[3] UNESP, Inst Quim, BR-14801907 Araraquara, SP, Brazil
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1999年 / 150卷 / 1-4期
基金
巴西圣保罗研究基金会;
关键词
tin dioxide; photoconductivity; oxygen; vacancy; sol-gel;
D O I
10.1080/10420159908226263
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source, We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens.
引用
收藏
页码:391 / 395
页数:5
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