Low-stiffness silicon cantilevers with integrated heaters and piezoresistive sensors for high-density AFM thermomechanical data storage

被引:135
作者
Chui, BW [1 ]
Stowe, TD
Ju, YS
Goodson, KE
Kenny, TW
Mamin, HJ
Terris, BD
Ried, RP
Rugar, D
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[3] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA
基金
美国国家科学基金会;
关键词
D O I
10.1109/84.661386
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-crystal silicon cantilevers 1 mu m thick have been demonstrated for use in high-density atomic-force microscopy (AFM) thermomechanical data storage, Cantilevers with integrated piezoresistive sensors were fabricated,vith measured sensitivities Delta R/R up to 7.5 x 10(-7) per Angstrom in close agreement with theoretical predictions, Separate cantilevers with integrated resistive heaters were fabricated using the same basic process. Electrical and thermal measurements on these heating devises produced results consistent with ANSYS simulations. Geometric variants of the cantilever were also tested in order to study the dependence of the thermal time constant on device parameters. Depending on the design, time constants as low as 1 mu s were achieved, A thermodynamic model was developed based on the cantilevers geometry and material properties, and the model was shown to predict device behavior accurately, A comprehensive understanding of cantilever functionality enabled us to optimize the cantilever for high-speed thermomechanical recording.
引用
收藏
页码:69 / 78
页数:10
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