The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si(1-x)Gex Nanowires

被引：14

作者：

Givan, Uri ^{[1
]}

Kwiat, Moria ^{[1
]}

Patolsky, Fernando ^{[1
]}

机构：

[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 10期

基金：

以色列科学基金会;

关键词：

LIQUID-SOLID GROWTH; SILICON-GERMANIUM; FABRICATION; BORON;

D O I：

10.1021/jp910934h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Semiconductor nanowires (NWs) have been widely investigated over the last few decades because of their unique quantum-confined physical properties which enable novel applications and their potential to play a key role in future electronics. The physical properties of binary-alloy Si(1-x)Gex NWs call be altered both by doping and by changing their chemical alloy composition. The simultaneous Control of both parameters is therefore essential, although not straightforward, for the complete utilization of Si(1-x)Gex NWs. While the influence of several growth parameters oil the composition of Si(1-x)Gex NW alloys was recently explored, the interplay of simultaneously controlling both dopant concentration and alloy composition has not yet been investigated. This study shows that the introduction of either boron or phosphorus as dopants, by the use of diborane (B2H6) or phosphine (PH3) during the growth of the Si(1-x)Gex NW, has a significant influence oil the chemical alloy composition of the NWs produced. This leads to Unexpected changes in its physical properties. Therefore, the tailoring of these properties of the NW during its growth requires a complete understanding of the interplay between the doping type and level and the chemical composition. Other aspects of the growth and properties of the Si(1-x)Gex NW, such as morphology, growth rate, growth yield, and electrical properties, were studied as well.

引用

页码：4331 / 4335

页数：5

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