Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires

被引：133

作者：

Clark, Trevor E. ^{[1
,2
]}

Nimmatoori, Pramod ^{[1
,2
]}

Lew, Kok-Keong ^{[1
,2
]}

Pan, Ling ^{[1
,2
]}

Redwing, Joan M. ^{[1
,2
]}

Dickey, Elizabeth C. ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 04期

关键词：

D O I：

10.1021/nl072849k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si1-xGex axial heterostructure nanowires grown via Au-mediated low pressure CVD using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via US growth.

引用

页码：1246 / 1252

页数：7

共 48 条

[1] Imaging and analysis of nanowires
Bell, DC
Wu, Y
Barrelet, CJ
Gradecak, S
Xiang, J
Timko, BP
Lieber, CM
[J]. MICROSCOPY RESEARCH AND TECHNIQUE, 2004, 64 (5-6) : 373 - 389
[2] Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods
Benedetti, A
Norris, DJ
Hetherington, CJD
Cullis, AG
Robbins, DJ
Wallis, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 3893 - 3899
[3] Benedetti A, 1999, INST PHYS CONF SER, P219
[4] SiGe nanostructures: new insights into growth processes
Berbezier, I
Ronda, A
Portavoce, A
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (35) : 8283 - 8331
[5] Few-electron quantum dots in nanowires
Bjork, MT
Thelander, C
Hansen, AE
Jensen, LE
Larsson, MW
Wallenberg, LR
Samuelson, L
[J]. NANO LETTERS, 2004, 4 (09) : 1621 - 1625
[6] One-dimensional heterostructures in semiconductor nanowhiskers
Björk, MT
Ohlsson, BJ
Sass, T
Persson, AI
Thelander, C
Magnusson, MH
Deppert, K
Wallenberg, LR
Samuelson, L
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (06) : 1058 - 1060
[7] Interface study on heterostructured GaP-GaAs nanowires
Borgstrom, Magnus T.
Verheijen, Marcel A.
Immink, George
de Smet, Thierry
Bakkers, Erik P. A. M.
[J]. NANOTECHNOLOGY, 2006, 17 (16) : 4010 - 4013
[8] ATOMIC-RESOLUTION CHEMICAL-ANALYSIS USING A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE
BROWNING, ND
CHISHOLM, MF
PENNYCOOK, SJ
[J]. NATURE, 1993, 366 (6451) : 143 - 146
[9] Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures
Chen, C.
Plante, M. C.
Fradin, C.
LaPierre, R. R.
[J]. JOURNAL OF MATERIALS RESEARCH, 2006, 21 (11) : 2801 - 2809
[10] Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations
Dujardin, R.
Poydenot, V.
Devillers, T.
Favre-Nicolin, V.
Gentile, P.
Barski, A.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (15)

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