Hydrogen-induced improvements in optical quality of GaNAs alloys

被引：52

作者：

Buyanova, IA ^{[1
]}

Izadifard, M

Chen, WM

Polimeni, A

Capizzi, M

Xin, HP

Tu, CW

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Roma La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy

[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 21期

关键词：

D O I：

10.1063/1.1578513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong suppression of potential fluctuations in the band edges of GaNAs alloys due to postgrowth hydrogen treatment, which is accompanied by a reopening of the alloy band gap, is revealed from temperature-dependent photoluminescence (PL) and PL excitation measurements. The effect likely indicates preferential trapping of hydrogen near the lattice sites with the highest nitrogen content. A remarkable improvement in the radiative efficiency of the alloys at room temperature is also demonstrated and is ascribed to efficient hydrogen passivation of competing nonradiative centers. (C) 2003 American Institute of Physics.

引用

页码：3662 / 3664

页数：3

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