Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy

被引：85

作者：

Buyanova, IA ^{[1
]}

Pozina, G

Hai, PN

Thinh, NQ

Bergman, JP

Chen, WM

Xin, HP

Tu, CW

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 15期

关键词：

D O I：

10.1063/1.1315632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaNxAs1-x/GaAs quantum structures after RTA: (i) improved composition uniformity of the GaNxAs1-x alloy, deduced from the photoluminescence (PL), PL excitation and time-resolved measurements; and (ii) significant reduction in the concentration of competing nonradiative defects, revealed by the optically detected magnetic resonance studies. (C) 2000 American Institute of Physics. [S0003-6951(00)00441-1].

引用

页码：2325 / 2327

页数：3

共 15 条

[1] Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures [J].

Buyanova, IA ;

Chen, WM ;

Monemar, B ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1999, 75 (24) :3781-3783

[2] Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy [J].

Buyanova, IA ;

Chen, WM ;

Pozina, G ;

Bergman, JP ;

Monemar, B ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :501-503

[3] ROLE OF FREE-CARRIERS IN THE APPLICATION OF OPTICALLY DETECTED MAGNETIC-RESONANCE FOR STUDIES OF DEFECTS IN SILICON [J].

CHEN, WM ;

MONEMAR, B .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02) :130-135

[4] Luminescence of as-grown and thermally annealed GaAsN/GaAs [J].

Francoeur, S ;

Sivaraman, G ;

Qiu, Y ;

Nikishin, S ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1998, 72 (15) :1857-1859

[5] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[6] InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs [J].

Kurtz, SR ;

Allerman, AA ;

Jones, ED ;

Gee, JM ;

Banas, JJ ;

Hammons, BE .

APPLIED PHYSICS LETTERS, 1999, 74 (05) :729-731

[7] Deep levels in p-type InGaAsN lattice matched to GaAs [J].

Kwon, D ;

Kaplar, RJ ;

Ringel, SA ;

Allerman, AA ;

Kurtz, SR ;

Jones, ED .

APPLIED PHYSICS LETTERS, 1999, 74 (19) :2830-2832

[8] Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy [J].

Li, LH ;

Pan, Z ;

Zhang, W ;

Lin, YW ;

Zhou, ZQ ;

Wu, RH .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :245-248

[9]

QUESLATI M, 1985, PHYS REV B, V32, P8220

[10] Optical properties of low band gap GaAs(1-x)Nx layers:: Influence of post-growth treatments [J].

Rao, EVK ;

Ougazzaden, A ;

Le Bellego, Y ;

Juhel, M .

APPLIED PHYSICS LETTERS, 1998, 72 (12) :1409-1411

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