Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures

被引：63

作者：

Buyanova, IA ^{[1
]}

Chen, WM

Monemar, B

Xin, HP

Tu, CW

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 24期

关键词：

D O I：

10.1063/1.125454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of growth temperature on the optical properties of GaAs/GaNxAs1-x quantum wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in growth temperature up to 580 degrees C is shown to improve the optical quality of the structures, while still allowing one to achieve high (> 3%) N incorporation. This conclusion is based on: (i) an observed increase in intensity of the GaNAs-related near-band-edge emission; (ii) a reduction in band-edge potential fluctuations, deduced from the analysis of the PL line shape; and (iii) a decrease in concentration of some extended defects detected under resonant excitation of the GaNAs. The thermal quenching of the GaNAs-related PL emission, however, is almost independent of the growth temperature and is attributed to a thermal activation of an efficient nonradiative recombination channel located in the GaNAs layers. (C) 1999 American Institute of Physics. [S0003-6951(99)03150-2].

引用

页码：3781 / 3783

页数：3

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