Restricted meniscus convective self-assembly

被引:46
作者
Chen, Kai [1 ]
Stoianov, Stefan V. [1 ]
Bangerter, Justin [1 ]
Robinson, Hans D. [1 ]
机构
[1] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA
基金
美国国家科学基金会;
关键词
Colloidal crystal; Self-assembly; Wetting film; Nanospheres; Evaporation; Humidity; 2-DIMENSIONAL ARRAYS; NANOSPHERE LITHOGRAPHY; MESOSCALE PARTICLES; PHOTONIC CRYSTALS; LATEX-PARTICLES; SURFACE-TENSION; FINE PARTICLES; LARGE AREAS; FILMS; CRYSTALLIZATION;
D O I
10.1016/j.jcis.2010.01.010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Convective (or evaporation-induced) self-assembly is a standard technique for depositing uniform, polycrystalline coatings of nanospheres across multiple square centimeters on the timescale of minutes. In this paper, we present a variation of this technique, where the drying meniscus is restricted by a straight-edge located approximately 100 mu m above the substrate adjacent to the drying zone. Surprisingly, we find this technique to yield films at roughly twice the growth rate compared to the standard technique. We attribute this to differing rates of diffusion of vapor from the drying crystal in the two cases. We also investigate the crystal growth rate dependence on ambient relative humidity and find, contrary to some previous reports, that the growth rate depends strongly on the humidity. We introduce a model which indicates that while the length of the drying zone may increase with humidity, this alone cannot compensate for the simultaneous reduction in evaporation rate, so a lower humidity must always lead to a higher growth speed. Comparing the model to our experimental results, we find that the length of the drying zone is constant and mostly independent of parameters such as humidity and surface tension. (C) 2010 Elsevier Inc. All rights reserved.
引用
收藏
页码:315 / 320
页数:6
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