Recent advances in avalanche photodiodes

被引:168
作者
Campbell, JC [1 ]
Demiguel, S
Ma, F
Beck, A
Guo, XY
Wang, SL
Zheng, XG
Li, XW
Beck, JD
Kinch, MA
Huntington, A
Coldren, LA
Decobert, J
Tscherptner, N
机构
[1] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA
[2] DRS Infrared Technol LP, Dallas, TX 75374 USA
[3] Univ Calif Santa Barbara, Dept Mat, Optoelect Technol Ctr, Santa Barbara, CA 93106 USA
[4] Alcatel R&I, F-91460 Marcoussis, France
关键词
avalanche photodiodes (APDs); impact ionization; infrared; multiplication noise; photodetectors; ultraviolet (UV);
D O I
10.1109/JSTQE.2004.833971
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The development of high-performance optical receivers has been a primary driving force for research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic systems toward higher bit rates has pushed APD performance toward higher bandwidths, lower noise, and higher gain-bandwidth products. Utilizing thin multiplication regions has reduced the excess noise. Further noise reduction has been demonstrated by incorporating new materials and impact ionization engineering with beneficially designed heterostructures. High gain-band-width products have been achieved waveguide structures. Recently, imaging and sensing applications have spurred interest in low noise APDs in the infrared and the UV as well as large area APDs and arrays. This paper reviews some of the recent progress in APD technology.
引用
收藏
页码:777 / 787
页数:11
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