Theory of THz emission from optically excited semiconductors in crossed electric and magnetic fields

被引:31
作者
Meinert, G [1 ]
Bányai, L [1 ]
Gartner, P [1 ]
Haug, H [1 ]
机构
[1] Univ Frankfurt, Inst Theoret Phys, D-60054 Frankfurt, Germany
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 08期
关键词
D O I
10.1103/PhysRevB.62.5003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The coherent transients generated by femtosecond interband photoexcitation of a semiconductor in crossed electric and magnetic fields are calculated. The scattering with LO phonons is considered and the complex interplay between excitation and dephasing is analyzed. While below the LO-phonon threshold the signal is not effectively damped, above the threshold damping takes place on a picosecond time scale, in qualitative agreement with corresponding experiments.
引用
收藏
页码:5003 / 5009
页数:7
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