Theory of THz emission from optically excited semiconductors in crossed electric and magnetic fields

被引：31

作者：

Meinert, G ^{[1
]}

Bányai, L ^{[1
]}

Gartner, P ^{[1
]}

Haug, H ^{[1
]}

机构：

[1] Univ Frankfurt, Inst Theoret Phys, D-60054 Frankfurt, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.62.5003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The coherent transients generated by femtosecond interband photoexcitation of a semiconductor in crossed electric and magnetic fields are calculated. The scattering with LO phonons is considered and the complex interplay between excitation and dephasing is analyzed. While below the LO-phonon threshold the signal is not effectively damped, above the threshold damping takes place on a picosecond time scale, in qualitative agreement with corresponding experiments.

引用

页码：5003 / 5009

页数：7

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