H/T scaling of the magnetoconductance near the conductor-insulator transition in two dimensions

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form Delta sigma(H-parallel to,T)=sigma(H-parallel to,T)-sigma(0,T)=f(H-parallel to/T) for magnetic fields H-parallel to applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions. [S0163-1829(98)52516-7].