New dithieno[3,2-b:2′,3′-d]thiophene oligomers as promising materials for organic field-effect transistor applications

被引:59
作者
Iosip, MD
Destri, S
Pasini, M
Porzio, W
Pernstich, KP
Batlogg, B
机构
[1] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy
[2] Inst Macromol Chem, Iasi 6600, Romania
[3] CNR, Ist Macromol, Milan, Italy
[4] ETH, Solid State Phys Lab, Swiss Fed Inst Technol, CH-8093 Zurich, Switzerland
关键词
organic semiconductor; organic field-effect transistor; vacuum-evaporated film;
D O I
10.1016/j.synthmet.2004.08.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We designed and synthesized new organic semiconductors for organic field-effect transistor (OFET) using the fused thiophene derivative, dithieno[3,2-b:2',3'-d]thiophene (DTT), as a core of the molecules. In order to understand the influence of dithienothiophene unit on the chemical, physical and electronic properties of the final oligomer we synthesized a related molecule having a fluorene unit as the core, which is known to display different chemical and electronic characteristics. The target co-oligomers based on dithienothiophene and thiophene or fluorene derivatives have been obtained by Suzuki coupling reactions. Electrochemical characterization of these molecules as films evidenced their reversible oxidation, a necessary condition for OFET active material. Their electronic energy scheme is well matched to the high work-function electrodes, gold or platinum. A closely packed face-to-face or face-on stacking arrangements in cast films and highly ordered vacuum-evaporated films are expected in view of the structural packing observed in similar compounds. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:251 / 257
页数:7
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