Surface micromachining of polycrystalline SiC deposited on SiO2 by APCVD

被引:11
作者
Fleischman, AJ [1 ]
Wei, X [1 ]
Zorman, CA [1 ]
Mehregany, M [1 ]
机构
[1] Case Western Reserve Univ, Dept Elect Engn & Appl Phys, Microfabricat Lab, Cleveland, OH 44106 USA
来源
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词
MEMS; surface micromachining; silicon carbide-on-oxide; APCVD;
D O I
10.4028/www.scientific.net/MSF.264-268.885
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline SiC (poly-SiC) films were successfully deposited on thermally grown SiO2 on 4-inch Si wafers at 1160 degrees C and 1050 degrees C. The films were characterized using XRD, TEM and RES. The poly-SiC films have a sharp, void free interface with the SiO2 underlayer and the microstructure consists of randomly oriented polycrystalline grains. Films grown at 1050 degrees C show evidence of some excess silicon. Lateral resonant structures fabricated from films grown at 1050 degrees C were found to resonate at actuation voltages as low as 50 V-pp. The Young's modulus for the 1050 degrees C films was determined to be 426 +/- 100 GPa.
引用
收藏
页码:885 / 888
页数:4
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