Red shift of plasmon resonance frequency due to the interacting Ag nanoparticles embedded in single crystal SiO2 by implantation

被引:150
作者
Liu, ZX [1 ]
Wang, HH
Li, H
Wang, XM
机构
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Beijing Univ, Lab Heavy Ion Phys, Beijing 100871, Peoples R China
关键词
D O I
10.1063/1.121196
中图分类号
O59 [应用物理学];
学科分类号
摘要
A metal nanoparticle system has been prepared by 200 Kev Ag+ ion implantation into perfect single crystal SiO2 at room temperature to dose: 6.7 x 10(16)/cm(2). The system presents quasidual-layer structure: the shallower implanted layer containing noninteracting small Ag nanoparticles and the deeper layer containing interacting large nanoparticles, in which great red shift, about 1 eV, comparing with the plasmon resonance frequency of the noninteracting nanoparticle, can be clearly observed. The red shift is attributed to the multipoles interaction among the high density nanoparticles at external electric field. Moreover, the magnitude of red shift increases with implanted dose. (C) 1998 American Institute of Physics.
引用
收藏
页码:1823 / 1825
页数:3
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