Optical characteristics of thin rf sputtered Ta2O5 layers

被引：23

作者：

Babeva, T

Atanassova, E

Koprinarova, J

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[2] Bulgarian Acad Sci, Cent Lab Photoproc, BU-1113 Sofia, Bulgaria

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 02期

关键词：

D O I：

10.1002/pssa.200406915

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of rf sputtered (30; 52 nm) Ta2O5 before and after O-2 annealing at 1173 K have been investigated in the terms of storage capacitor applications for high density dynamic memories. Refractive index and thickness of the films are determined from transmittance and reflectance measurements at normal light incidence in the spectral range 400 - 800 nm. The film density explored by refractive index is improved with increasing film thickness as well as after annealing. The optical band gap is found to be 4.20 eV for 30 nm and 4.12 eV for 52 nm Ta2O5 regardless of the amorphous status of the layers-amorphous (as-deposited) or polycrystalline (annealed layers). (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：330 / 336

页数：7

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