Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2O

被引：7

作者：

Choi, WK ^{[1
]}

Tan, LS ^{[1
]}

Lim, JY ^{[1
]}

Pek, SG ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Microelect Lab, Singapore 119260, Singapore

来源：

THIN SOLID FILMS | 1999年 / 343卷

关键词：

rapid thermal annealing; sputtering; tantalum pentoxide;

D O I：

10.1016/S0040-6090(98)01622-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of annealing ambient (Ar, N-2, O-2 and N2O) and durations (60 and 200 s) of rapid thermal annealing (RTA) on the insulating property of RF sputtered tantalum pentoxide films were examined. It was found that films sputtered at 200 W were more leaky than those sputtered at 100 W. It was also discovered that RTA in O-2 and N2O and at a longer duration (200 s) improved the insulating property of the films. This improvement was suggested to be due to a layer of SiO2 formed at the Si-Ta2O5 interface when annealed. The conduction mechanism for the O-2 and N2O annealed films was found to be of Poole-Frenkel type. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：105 / 107

页数：3

共 12 条

[1] A MODEL FOR THE VARIATIONS IN THE FIELD-DEPENDENT BEHAVIOR OF THE POOLE-FRENKEL EFFECT [J].

CHOI, WK ;

DELIMA, JJ ;

OWEN, AE .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 137 (01) :345-351

[2] ANALYSIS OF THE VARIATION IN THE FIELD-DEPENDENT BEHAVIOR OF THERMALLY OXIDIZED TANTALUM OXIDE-FILMS [J].

CHOI, WK ;

LING, CH .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) :3987-3990

[3]

CHOI WK, 1998, IN PRESS APPL SURF S

[4] CLOCKWISE C-V HYSTERESIS PHENOMENA OF METAL-TANTALUM-OXIDE-SILICON-OXIDE-SILICON (P) CAPACITORS DUE TO LEAKAGE CURRENT THROUGH TANTALUM OXIDE [J].

HWU, JG ;

JENG, MJ ;

WANG, WS ;

TU, YK .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4277-4283

[5] EFFECTS OF ANNEALING IN O-2 AND N-2 ON THE ELECTRICAL-PROPERTIES OF TANTALUM OXIDE THIN-FILMS PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

KIM, IL ;

KIM, JS ;

KWON, OS ;

AHN, ST ;

CHUN, JS ;

LEE, WJ .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (10) :1435-1441

[6]

KUN SO, 1994, THIN SOLID FILMS, V253, P435

[7] A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O-2 or N2O by zero-bias thermally stimulated current spectroscopy [J].

Lau, WS ;

Khaw, KK ;

Qian, PW ;

Sandler, NP ;

Chu, PK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (5A) :2599-2604

[8] OXIDATION TEMPERATURE-DEPENDENCE OF THE DC ELECTRICAL-CONDUCTION CHARACTERISTICS AND DIELECTRIC STRENGTH OF THIN TA2O5 FILMS ON SILICON [J].

OEHRLEIN, GS .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1587-1595

[9] Dielectric constants of Ta2O5 thin films deposited by rf sputtering [J].

Shibata, S .

THIN SOLID FILMS, 1996, 277 (1-2) :1-4

[10] UV-O3 AND DRY-O2 - 2-STEP ANNEALED CHEMICAL VAPOR-DEPOSITED TA2O5 FILMS FOR STORAGE DIELECTRICS OF 64-MB DRAMS [J].

SHINRIKI, H ;

NAKATA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :455-462

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