CLOCKWISE C-V HYSTERESIS PHENOMENA OF METAL-TANTALUM-OXIDE-SILICON-OXIDE-SILICON (P) CAPACITORS DUE TO LEAKAGE CURRENT THROUGH TANTALUM OXIDE

被引:16
作者
HWU, JG
JENG, MJ
WANG, WS
TU, YK
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10.1063/1.339102
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O59 [应用物理学];
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页码:4277 / 4283
页数:7
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